Seminar: Spintronics Nano-Devices for Nonvolatile VLSIs

Hideo Ohno

Tohoku University

Date

Thursday, October 15, 2015 - 11:15am to 12:15pm

Location

1601 Elings Hall

Description

I review physics and materials science of nanoscale spintronic devices being developed for nonvolatile VLSI [1]. VLSIs can be made high performance and yet standby-power free by using magnetic tunnel junction, a two-terminal spintronic device, in combination with current CMOS technology. The scalability of perpendicular magnetic tunnel junctions utilizing CoFeB-MgO [2] is passing the 20 nm dimension; the smallest and well characterized ones now reaching 11 nm [3, 4]. Another important entity is three terminal devices utilizing current-induced domain wall motion [4] and its recent variants using spin-orbit torque [5-7]. If time allows, I will discuss electric-field switching of magnetization in perpendicular CoFeB-MgO magnetic tunnel junctions [8].

[1] H. Ohno, International Electron Device Meeting (IEDM) (invited) 9.4.1 (2010).

[2] S. Ikeda, et al. Nature Materials, 9, 721 (2010).

[3] H. Sato, et al. IEDM 2013 and Appl. Phys. Lett. 105, 062403 (2014).

[4] S. Fukami, et al. IEDM 2013; Nature Comm. 4:2293 doi: 10.1038/ncomms3293 (2013); IEEE Tras. Mag. 50, 34106 (2014); Phys. Rev. B 91, 235401 (2015).

[5] M. Yamanouchi, et al. Appl. Phys. Lett. 102, 212408 (2013).

[6] C. Zhang, et al. Appl. Phys. Lett. 107, 012401 (2015).

[7] S. Fukami, et al. arXiv:1507.00888.

[8] S. Kanai, et al. Appl. Phys. Lett. 101, 122403 (2012); 103, 072408 (2013); 104, 212406 (2014)