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The Particle-Size Dependence of the Activation Energy for Decomposition of Lithium Amide.. Angewandte Chemie International Edition. -:inpress.. 2011.
Oxygen vacancies in ZnO. Applied Physics Letters. 87:122102.. 2005.
Oxygen vacancies and donor impurities in beta-Ga2O3. Appl. Phys. Lett.. 97:142106.. 2010.
Oxide interfaces for novel electronic applications. New Journal of Physics. 16:025005.. 2014.
Origins of optical absorption and emission lines in AlN. Applied Physics Letters. 105:111104.. 2014.
Ordering and criticality in an underscreened Kondo chain. arXiv preprint. arXiv:1301.3538. 2013.
Optimizing optical absorption of TiO2 by alloying with TiS2. Appl. Phys. Lett.. 92:41104.. 2008.
A numerical study of the electrostatic properties of two finite-width charged dielectric slabs in water. J. Chem. Phys.. 129:134511.. 2008.
Non-Fermi-liquid d-wave metal phase of strongly interacting electrons. Nature. 493:39-44.. 2013.
New insights into the role of native point defects in ZnO. Journal of Crystal Growth. 287:58-65.. 2006.
Native point defects in LaAlO3 : A hybrid functional study. Phys. Rev. B. 88:214117.. 2013.
Native point defects and dangling bonds in alpha-Al2O3. Journal of Applied Physics. 113(4):44501.. 2013.
Native defects in Al2O3 and their impact on III-V/Al2O3 metal-oxide-semiconductor-based devices. Journal of Applied Physics. 109(3):33715.. 2011.
Mutual Passivation of Electrically Active and Isovalent Impurities in Dilute Nitrides. Phys. Rev. Lett.. 100:45505.. 2008.
Mechanisms for the decomposition and dehydrogenation of Li amide/imide. Phys. Rev. B. 85:64115.. 2012.
Mechanism of Visible-Light Photocatalysis in Nitrogen-Doped TiO2. Advanced Materials. 23:2343-2347.. 2011.
Magnetism and local structure in low-dimensional Mott insulating GdTiO 3. Physical Review B. 88:121104.. 2013.
Load balancing for partition-based similarity search. Proceedings of the 37th international ACM SIGIR conference on Research & development in information retrieval.. 2014.
LDA and hybrid functional calculations for defects in ZnO, SnO2, and TiO2. Physica Status Solidi (b). 248:799.. 2011.
Intrinsic and extrinsic causes of electron accumulation layers on InAs surfaces. Appl. Phys. Lett.. 97:192106.. 2010.
Interactions between hydrogen impurities and vacancies in Mg and Al: A comparative analysis based on density functional theory.. Phys. Rev. B. 80:184110.. 2009.
Impact of native defects in high-k dielectric oxides on GaN/oxide metal–oxide–semiconductor devices. physica status solidi (b). 250:787–791.. 2013.
Impact of Group-II Acceptors on the Electrical and Optical Properties of GaN. J. Appl. Phys.. 52:08JJ04.. 2013.
Impact of carbon and nitrogen impurities in high-k dielectrics on metal-oxide-semiconductor devices. Appl. Phys. Lett. 102:142902.. 2013.
Hydrogenated vacancies and hidden hydrogen in SrTiO 3. Physical Review B. 89:075202.. 2014.