Publications
Found 98 results
Author Title Type [ Year
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Decomposition mechanism and the effects of metal additives on the kinetics of lithium alanate. Phys. Chem. Chem. Phys.. 14:2840.
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2012. Effects of doping on the lattice parameter of SrTiO3. Appl. Phys. Lett.. 100:262104.
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2012. Effects of doping on the lattice parameter of SrTiO3. Appl. Phys. Lett.. 100:262104.
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2012. Mechanisms for the decomposition and dehydrogenation of Li amide/imide. Phys. Rev. B. 85:64115.
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2012. Role of nitrogen vacancies in the luminescence of Mg-doped GaN. Applied Physics Letters. 100:142110.
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2012. Role of self-trapping in luminescence and p-type conductivity of wide-band-gap oxides. Phys. Rev. B. 85:81109.
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2012. Shallow versus Deep Nature of Mg Acceptors in Nitride Semiconductors. Phys. Rev. Letters. 108:156403.
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2012. Strong correlation induced charge localization in antiferromagnets. arXiv preprint. arXiv:1212.6634
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2012. Accuracy of topological entanglement entropy on finite cylinders. Physical Review Letters. 111:107205.
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2013. Ambipolar doping in SnO. Applied Physics Letters. 103:082118.
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2013. Collapsing Schr$\backslash$" odinger Cats in the Density Matrix Renormalization Group. arXiv preprint arXiv:1309.7438.
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2013. Conductivity and transparency of TiO2 from first principles. SPIE Solar Energy+ Technology.
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2013. Dangling bonds and vacancies in germanium. Phys. Rev. B. 87(3):35203.
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2013. Defects at Ge/oxide and IIIäóñV/oxide interfaces. Microelectronic Engineering. 109:211.
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2013. Dual behavior of excess electrons in rutile TiO2. physica status solidi (RRL)-Rapid Research Letters. doi: 10.1002/pssr.201206464
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2013. Effects of strain on the electron effective mass in GaN and AlN. Appl. Phys. Lett.. 102:142105.
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2013. Energy Conversion: Solid-State Lighting. Energy Conversion: Solid-State Lighting, in Computational Approaches to Energy Materials (eds A. Walsh, A. A. Sokol and C. R. A. Catlow).
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2013. Ground states of spin-1/2 triangular antiferromagnets in a magnetic field. Phys. Rev. B. (in press)
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2013. Ground states of spin-1/2 triangular antiferromagnets in a magnetic field. Phys. Rev. B. (in press)
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2013. Impact of carbon and nitrogen impurities in high-k dielectrics on metal-oxide-semiconductor devices. Appl. Phys. Lett. 102:142902.
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2013. Impact of Group-II Acceptors on the Electrical and Optical Properties of GaN. J. Appl. Phys.. 52:08JJ04.
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2013. Impact of native defects in high-k dielectric oxides on GaN/oxide metal–oxide–semiconductor devices. physica status solidi (b). 250:787–791.
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2013. Magnetism and local structure in low-dimensional Mott insulating GdTiO 3. Physical Review B. 88:121104.
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2013. Native point defects and dangling bonds in alpha-Al2O3. Journal of Applied Physics. 113(4):44501.
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2013. Native point defects in LaAlO3 : A hybrid functional study. Phys. Rev. B. 88:214117.
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2013.