Publications
Found 98 results
Author Title Type [ Year
Filters: First Letter Of Last Name is J [Clear All Filters]
Oxygen vacancies in ZnO. Applied Physics Letters. 87:122102.
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2005. Effects of cation d states on III-nitride and II-oxide wide-band-gap semiconductors. Physical Review B. 74:45202.
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2006. New insights into the role of native point defects in ZnO. Journal of Crystal Growth. 287:58-65.
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2006. Dangling-bond defects and hydrogen passivation in germanium. Appl. Phys. Lett.. 91:142101.
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2007. Hydrogen multicenter bonds. Nature Materials. 6:44-47.
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2007. Probing the structural hierarchy and energy landscape of an RNA T-loop hairpin. Nucleic Acids Res. 35:6995-7002.
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2007. Atomic and electronic structure of hydrogen-related centers in hydrogen storage materials. Physica B. Physics of Condensed Matter
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2008. Carbon-nitrogen molecules in GaAs and GaP. Phys. Rev. B. 77:195209.
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2008. Electrical activity of hydrogen impurities in GaSb: First-principles calculations. Phys. Rev. B. 78:35204.
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2008. Mutual Passivation of Electrically Active and Isovalent Impurities in Dilute Nitrides. Phys. Rev. Lett.. 100:45505.
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2008. A numerical study of the electrostatic properties of two finite-width charged dielectric slabs in water. J. Chem. Phys.. 129:134511.
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2008. Optimizing optical absorption of TiO2 by alloying with TiS2. Appl. Phys. Lett.. 92:41104.
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2008. Role of hydrogen at germanium/dielectric interfaces. Thin Solid Films. Volume 517, Issue 1, Fifth International Conference on Silicon Epitaxy and Heterostructures (ICSI-5):144-147.
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2008. Sources of Electrical Conductivity in SnO2. Phys. Rev. Lett.. 101:55502.
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2008. Sources of unintentional n-type conductivity in InN. Appl. Phys. Lett.. 92:32104.
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2008. Atomic and electronic structure of hydrogen-related centers in hydrogen storage materials. Physica B: Condensed Matter. 404(5-7):793.
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2009. The effect of surface tethering on the folding of the src-SH3 protein domain. Phys. Biol.. 6:15004.
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2009. First-principles investigations of F and Cl impurities in NaAlH4. Journal of Alloys and Compounds. 484:247.
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2009. First-principles study of the formation and migration of native defects in NaAlH4. Phys. Rev. B. 80:224102.
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2009. Formation and migration of charged point defects in MgH2: First-principles calculations. Phys. Rev. B. 80:64102.
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2009. Hydrogen interactions with acceptor impurities in SnO2: First-principles calculations. Phys. Rev. B. 79:245206.
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2009. Hydrogen interactions with acceptor impurities in SnO2: First-principles calculations. Phys. Rev. B. 79:245206.
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2009. Interactions between hydrogen impurities and vacancies in Mg and Al: A comparative analysis based on density functional theory.. Phys. Rev. B. 80:184110.
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2009. A pathway to p-type wide-band-gap semiconductors. Appl. Phys. Lett.. 95:172109.
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2009. Point defects in Al2O3 and their impact on gate stacks. Microelectronic Engineering. 86:1756.
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2009.