Found 39 results
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Bellesia G, Shea J-E.  2009.  Effect of beta-sheet propensity on peptide aggregation.. J. Chem. Phys.. 130:145103.
Eisenmenger ND, Su GM, Welch GC, Takacs CJ, Bazan GC, Kramera EJ, Chabinyc ML.  2013.  Effect of bridging atom identity on the morphological behavior of solution-processed small molecule bulk heterojunction photovoltaics. Chem. Mater.. (in press)
Zhuang Z., Jewett A.I, Soto P., Shea J.E.  2009.  The effect of surface tethering on the folding of the src-SH3 protein domain. Phys. Biol.. 6:15004.
Umezawa N..  2009.  Effects of barium incorporation into HfO2 gate dielectrics on reduction in charged defects: First-principles study. Appl. Phys. Lett.. 94:22903.
Umezawa N.  2010.  Effects of capping HfO2 with multivalent oxides toward reducing the number of charged defects. Appl. Phys. Lett.. 96:162906.
Lyons JL, Janotti A, Van de Walle CG.  2014.  Effects of carbon on the electrical and optical properties of InN, GaN, and AlN. Physical Review B. 89:035204.
Janotti A., Segev D., Van de Walle C.G.  2006.  Effects of cation d states on III-nitride and II-oxide wide-band-gap semiconductors. Physical Review B. 74:45202.
Janotti A., Jalan B., Stemmer S., Van de Walle C.G.  2012.  Effects of doping on the lattice parameter of SrTiO3. Appl. Phys. Lett.. 100:262104.
Griffin M., Friedel M., Shea J.E..  2005.  Effects of frustration, confinement, and surface interactions on the dimerization of an off-lattice beta-barrel protein. J. Chem. Phys.. 123:174707.
Lyons JL, Janotti A, Van de Walle CG.  2014.  Effects of hole localization on limiting p-type conductivity in oxide and nitride semiconductors. Journal of Applied Physics. 115:012014.
McBride PM, Yan Q, Van de Walle CG.  2014.  Effects of In profile on simulations of InGaN/GaN multi-quantum-well light-emitting diodes. Applied Physics Letters. 105:083507.
Do TD, LaPointe NE, Economou NJ, Buratto SK, Feinstein SC, Shea J-E, Bowers MT.  2013.  Effects of pH and Charge State on Peptide Assembly: The YVIFL Model System. The Journal of Physical Chemistry B. 117:10759–10768.
Lai H-H, Hung H-H.  2014.  Effects of short-ranged interactions on the Kane-Mele model without discrete particle-hole symmetry. Physical Review B. 89:165135.
Lai H-H, Hung H-H.  2014.  Effects of short-ranged interactions on the Kane-Mele model without discrete particle-hole symmetry. arXiv preprint arXiv:1401.2167.
Wei G., Shea J.-E.  2006.  Effects of solvent on the structure of the Alzheimer amyloid-b(25-35) peptide. Biophys. J.. 91:1638.
Dreyer C.E, Janotti A., Van de Walle C.G.  2013.  Effects of strain on the electron effective mass in GaN and AlN. Appl. Phys. Lett.. 102:142105.
Friedel M., Baumketner A., Shea J.-E..  2006.  Effects of surface tethering on protein folding mechanisms. Proc. Nat. Acad. Sci. USA. 103:8396-8401.
García-Cervera C.J.  2007.  An Efficient Real Space Method for Orbital-Free Density-Functional Theory. Comm. Comp. Phys.. 2 (2):334-357.
Brown F.LH.  2008.  Elastic Modeling of Biomembranes and Lipid Bilayers. Annual Review of Physical Chemistry. 59:685-712.
Rajan VP, Shaw JH, Rossol MN, Zok FW.  2014.  An elastic–plastic constitutive model for ceramic composite laminates. Composites Part A: Applied Science and Manufacturing. 66:44–57.
Choudhury D., Hazarika A., Venimadhav A., Kakarla C., Delaney KT.  2010.  Electric and magnetic polarizabilities of hexagonal Ln2CuTiO6 (Ln=Y, Dy, Ho, Er and Yb). Phys. Rev. B 82, 134203 (2010). 82:134203.
Peles A., Janotti A., Van de Walle C.G.  2008.  Electrical activity of hydrogen impurities in GaSb: First-principles calculations. Phys. Rev. B. 78:35204.
Tong H, Umezawa N, Ye J, Ohno T.  2011.  Electronic coupling assembly of semiconductor nanocrystals: self-narrowed band gap to promise solar energy utilization. Energy Environ. Sci. 4:1684.
Rondinelli J.M, Caffrey N.M, Sanvito S., Spaldin N.A.  2008.  Electronic properties of bulk and thin film SrRuO3: a search for the metal-insulator transition. Phys. Rev. B. 78:155107.
Miao M.S, Yan Q.M, Van de Walle C.G..  2013.  Electronic structure of a single-layer InN quantum well in a GaN matrix. Appl. Phys. Lett.. 102:102103.