Found 16 results[ Author] Title Type Year
Filters: First Letter Of Title is N [Clear All Filters]
Nucleation near the eutectic point in a Potts-lattice gas model. The Journal of Chemical Physics. 140:084111.. 2014.
Numerical Scaling Studies of Kinetically-Limited Electrochemical Nucleation and Growth with Accelerated Stochastic Simulations. Journal of The Electrochemical Society. 161:E3001–E3008.. 2014.
A novel projection approximation algorithm for the fast and accurate computation of molecular collision cross sections. Int. J. Mass Spectrom. -:inpress.. 2011.
Niche theory and the persistence of populations: applications to competitive communities and an infectious disease.. 2013.
Native point defects in LaAlO3 : A hybrid functional study. Phys. Rev. B. 88:214117.. 2013.
Native point defects and dangling bonds in alpha-Al2O3. Journal of Applied Physics. 113(4):44501.. 2013.
Numerical Simulation of an Electroweak Oscillon. Physical Review D. 76:85017.. 2007.
Nanoscale quantification of octahedral tilts in perovskite films. Applied Physics Letters. 100:191909.. 2012.
New insights into the role of native point defects in ZnO. Journal of Crystal Growth. 287:58-65.. 2006.
A numerical study of the electrostatic properties of two finite-width charged dielectric slabs in water. J. Chem. Phys.. 129:134511.. 2008.
Non-Fermi-liquid d-wave metal phase of strongly interacting electrons. Nature. 493:39-44.. 2013.
Neutron diffraction study of La4LiAuO8: Understanding Au3+ in an oxide environment. Journal of Solid State Chemistry. 184:1439.. 2011.
Numerical self-consistent field theory of multicomponent polymer blends in the Gibbs ensemble. Soft Matter. 9:11288–11294.. 2013.
N-Alkyldinaphthocarbazoles, Azaheptacenes, for Solution-Processed Organic Field-Effect Transistors. Journal of the American Chemical Society. 134(44):18185–18188.. 2012.
N-Alkyldinaphthocarbazoles, Azaheptacenes, for Solution-Processed Organic Field-Effect Transistors. J. Am. Chem. Soc. 134:18185.. 2012.
Native defects in Al2O3 and their impact on III-V/Al2O3 metal-oxide-semiconductor-based devices. Journal of Applied Physics. 109(3):33715.. 2011.