Publications
Found 98 results
Author Title [ Type
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Impact of carbon and nitrogen impurities in high-k dielectrics on metal-oxide-semiconductor devices. Appl. Phys. Lett. 102:142902.
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2013. Impact of Group-II Acceptors on the Electrical and Optical Properties of GaN. J. Appl. Phys.. 52:08JJ04.
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2013. Impact of native defects in high-k dielectric oxides on GaN/oxide metal–oxide–semiconductor devices. physica status solidi (b). 250:787–791.
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2013. Interactions between hydrogen impurities and vacancies in Mg and Al: A comparative analysis based on density functional theory.. Phys. Rev. B. 80:184110.
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2009. Intrinsic and extrinsic causes of electron accumulation layers on InAs surfaces. Appl. Phys. Lett.. 97:192106.
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2010. LDA and hybrid functional calculations for defects in ZnO, SnO2, and TiO2. Physica Status Solidi (b). 248:799.
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2011. Magnetism and local structure in low-dimensional Mott insulating GdTiO 3. Physical Review B. 88:121104.
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2013. Mechanism of Visible-Light Photocatalysis in Nitrogen-Doped TiO2. Advanced Materials. 23:2343-2347.
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2011. Mechanisms for the decomposition and dehydrogenation of Li amide/imide. Phys. Rev. B. 85:64115.
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2012. Mutual Passivation of Electrically Active and Isovalent Impurities in Dilute Nitrides. Phys. Rev. Lett.. 100:45505.
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2008. Native defects in Al2O3 and their impact on III-V/Al2O3 metal-oxide-semiconductor-based devices. Journal of Applied Physics. 109(3):33715.
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2011. Native point defects and dangling bonds in alpha-Al2O3. Journal of Applied Physics. 113(4):44501.
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2013. Native point defects in LaAlO3 : A hybrid functional study. Phys. Rev. B. 88:214117.
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2013. New insights into the role of native point defects in ZnO. Journal of Crystal Growth. 287:58-65.
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2006. Non-Fermi-liquid d-wave metal phase of strongly interacting electrons. Nature. 493:39-44.
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2013. A numerical study of the electrostatic properties of two finite-width charged dielectric slabs in water. J. Chem. Phys.. 129:134511.
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2008. Optimizing optical absorption of TiO2 by alloying with TiS2. Appl. Phys. Lett.. 92:41104.
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2008. Ordering and criticality in an underscreened Kondo chain. arXiv preprint. arXiv:1301.3538
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2013. Origins of optical absorption and emission lines in AlN. Applied Physics Letters. 105:111104.
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2014. Oxide interfaces for novel electronic applications. New Journal of Physics. 16:025005.
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2014. Oxygen vacancies and donor impurities in beta-Ga2O3. Appl. Phys. Lett.. 97:142106.
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2010. Oxygen vacancies in ZnO. Applied Physics Letters. 87:122102.
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2005. The Particle-Size Dependence of the Activation Energy for Decomposition of Lithium Amide.. Angewandte Chemie International Edition. -:inpress.
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2011. A pathway to p-type wide-band-gap semiconductors. Appl. Phys. Lett.. 95:172109.
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2009. Point defects in Al2O3 and their impact on gate stacks. Microelectronic Engineering. 86:1756.
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2009.