Temperature and carrier-density dependence of Auger and radiative recombination in nitride optoelectronic devices. New Journal of Physics. 15:125006.. 2013.
Role of nitrogen vacancies in the luminescence of Mg-doped GaN. Applied Physics Letters. 100:142110.. 2012.
Origins of optical absorption and emission lines in AlN. Applied Physics Letters. 105:111104.. 2014.
Interplay of polarization fields and Auger recombination in the efficiency droop of nitride light-emitting diodes. Applied Physics Letters. 101(23):231107-231107.. 2012.
First-principles study of high-field-related electronic behavior of group-III nitrides. Physical Review B. 90:121201.. 2014.
Effects of In profile on simulations of InGaN/GaN multi-quantum-well light-emitting diodes. Applied Physics Letters. 105:083507.. 2014.
Confinement effects on valence-subband character and polarization anisotropy in (1122) semipolar InGaN/GaN quantum wells. Journal of Applied Physics. 111:73113.. 2012.