Found 13 resultsAuthor [ Title] Type Year
Filters: Author is Van de Walle, Chris G [Clear All Filters]
Auger Recombination in GaAs from First Principles. ACS Photonics. 1:643–646.. 2014.
Band alignments and polarization properties of BN polymorphs. Applied Physics Express. 7:031001.. 2014.
Conductivity and transparency of TiO2 from first principles. SPIE Solar Energy+ Technology.. 2013.
Effects of In profile on simulations of InGaN/GaN multi-quantum-well light-emitting diodes. Applied Physics Letters. 105:083507.. 2014.
First-principles study of high-field-related electronic behavior of group-III nitrides. Physical Review B. 90:121201.. 2014.
Impact of native defects in high-k dielectric oxides on GaN/oxide metal–oxide–semiconductor devices. physica status solidi (b). 250:787–791.. 2013.
Interplay of polarization fields and Auger recombination in the efficiency droop of nitride light-emitting diodes. Applied Physics Letters. 101(23):231107-231107.. 2012.
LiH as a Li+ and H- ion provider. Solid State Ionics. 253:53–56.. 2013.
Native point defects and dangling bonds in alpha-Al2O3. Journal of Applied Physics. 113(4):44501.. 2013.
Origins of optical absorption and emission lines in AlN. Applied Physics Letters. 105:111104.. 2014.
Structural origins of the properties of rare earth nickelate superlattices. Phys. Rev. B. 87(6):60101.. 2013.
Temperature and carrier-density dependence of Auger and radiative recombination in nitride optoelectronic devices. New Journal of Physics. 15:125006.. 2013.
Vacancies and small polarons in SrTiO 3. Physical Review B. 90:085202.. 2014.