Publications

Found 5 results
Author [ Title(Desc)] Type Year
Filters: Author is N. Umezawa  [Clear All Filters]
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Umezawa N..  2009.  Effects of barium incorporation into HfO2 gate dielectrics on reduction in charged defects: First-principles study. Appl. Phys. Lett.. 94:22903.
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Janotti A., Varley J.B, Rinke P., Umezawa N., Kresse G., Van de Walle C.G.  2010.  Hybrid functional studies of the oxygen vacancy in TiO2. Phys. Rev. B. 81:85212.
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Umezawa N., Janotti A., Rinke P., Chikyow T., Van de Walle C.G.  2008.  Optimizing optical absorption of TiO2 by alloying with TiS2. Appl. Phys. Lett.. 92:41104.
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Umezawa N., Sato M., Shiraishi K..  2008.  Reduction in charged defects associated with oxygen vacancies in hafnia by magnesium incorporation: First-principles study. Appl. Phys. Lett.. 93:223104.
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Umezawa N., Shiraishi K., Chikyow T..  2009.  Stability of Si impurity in high-? oxides Microelectronic Engineering. 86:1780.