Found 4 results[ Author] Title Type Year
Filters: Author is N. Umezawa [Clear All Filters]
Effects of barium incorporation into HfO2 gate dielectrics on reduction in charged defects: First-principles study. Appl. Phys. Lett.. 94:22903.. 2009.
Stability of Si impurity in high-? oxides Microelectronic Engineering. 86:1780.. 2009.
Optimizing optical absorption of TiO2 by alloying with TiS2. Appl. Phys. Lett.. 92:41104.. 2008.
Reduction in charged defects associated with oxygen vacancies in hafnia by magnesium incorporation: First-principles study. Appl. Phys. Lett.. 93:223104.. 2008.