Publications
Point defects in Al2O3 and their impact on gate stacks. Microelectronic Engineering. 86:1756.
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2009. Point defects in Al2O3 and their impact on gate stacks. Microelectronic Engineering. 86:1756.
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2009. Quantum Computing with Defects. Proc. Natl. Acad. Sci.. 107:8513.
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2010. Role of hydrogen at germanium/dielectric interfaces. Thin Solid Films. Volume 517, Issue 1, Fifth International Conference on Silicon Epitaxy and Heterostructures (ICSI-5):144-147.
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2008. The role of oxygen-related defects and hydrogen impurities in HfO2 and ZrO2. Microelectronic Engineering. 88(7):1452-1456.
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2011. Role of self-trapping in luminescence and p-type conductivity of wide-band-gap oxides. Phys. Rev. B. 85:81109.
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2012. Role of Si and Ge as impurities in ZnO. Phys. Rev. B. 80:205113.
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2009. Sources of Electrical Conductivity in SnO2. Phys. Rev. Lett.. 101:55502.
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2008. Sources of unintentional n-type conductivity in InN. Appl. Phys. Lett.. 92:32104.
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2008. Strain effects on the electronic structure of SrTiO3: Toward high electron mobilities. Phys. Rev. B. 84:201304.
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2011. Tin dioxide from first principles: Quasiparticle electronic states and optical properties. Phys. Rev. B. 83:35116.
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2011. Why nitrogen cannot lead to p-type conductivity in ZnO. Appl. Phys. Lett.. 95:252105.
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2009.