Shallow versus Deep Nature of Mg Acceptors in Nitride Semiconductors. Phys. Rev. Letters. 108:156403.. 2012.
A pathway to p-type wide-band-gap semiconductors. Appl. Phys. Lett.. 95:172109.. 2009.
LDA and hybrid functional calculations for defects in ZnO, SnO2, and TiO2. Physica Status Solidi (b). 248:799.. 2011.
Interactions between hydrogen impurities and vacancies in Mg and Al: A comparative analysis based on density functional theory.. Phys. Rev. B. 80:184110.. 2009.
Impact of Group-II Acceptors on the Electrical and Optical Properties of GaN. J. Appl. Phys.. 52:08JJ04.. 2013.
Impact of carbon and nitrogen impurities in high-k dielectrics on metal-oxide-semiconductor devices. Appl. Phys. Lett. 102:142902.. 2013.
Formation and migration of charged point defects in MgH2: First-principles calculations. Phys. Rev. B. 80:64102.. 2009.
First-principles study of the formation and migration of native defects in NaAlH4. Phys. Rev. B. 80:224102.. 2009.
Alternative sources of p-type conduction in acceptor-doped ZnO. Appl. Phys. Lett.. 97:72112.. 2010.
Advances in electronic structure methods for defects and impurities in solids. Phys. Status Solidi B. 248:19.. 2011.