Found 355 results
Author Title Type [ Year(Asc)]
Hammetter C.I, Rinaldi R.G, Zok F.W.  2012.  Pyramidal Lattice Structures for High Strength and Energy Absorption. Journal of Applied Mechanics,. (in press)
Vannozzi C.  2012.  Relaxation and coalescence of two equal-sized viscous drops in a quiescent matrix. J. Fluid Mech.. 694:408.
Cogley T, Startz R.  2012.  Robust Estimation of ARMA Models with Near Root Cancellation. submitted.
Yan Q, Janotti A, Scheffler M, de Walle V, G C.  2012.  Role of nitrogen vacancies in the luminescence of Mg-doped GaN. Applied Physics Letters. 100:142110.
Varley J.B, Janotti A., Franchini C., Van de Walle C.G.  2012.  Role of self-trapping in luminescence and p-type conductivity of wide-band-gap oxides. Phys. Rev. B. 85:81109.
Griffin SM, Lilienblum M, Delaney KT, Kumagai Y, Fiebig M, Spaldin NA.  2012.  Scaling Behavior and Beyond Equilibrium in the Hexagonal Manganites. Physical Review X. 2(4):41022.
Lyons JL, Janotti A, Van de Walle CG.  2012.  Shallow versus Deep Nature of Mg Acceptors in Nitride Semiconductors. Phys. Rev. Letters. 108:156403.
Takacs CJ, Sun Y, Welch GC, Perez LA, Liu X, Wen W, Bazan GC, Heeger AJ.  2012.  Solar cell efficiency, self-assembly and dipole-dipole interactions of isomorphic narrow bandgap molecules. Journal of the American Chemical Society. 134:16597.
Yan Q, Rinke P, Winkelnkemper M, Qteish A, Bimberg D, Scheffler M, Van de Walle CG.  2012.  Strain effects and band parameters in MgO, ZnO, and CdO. Appl. Phys. Lett.. 101:152105.
Zhu Z, Jiang H-C, Qi Y, Tian C-S, Weng Z-Y.  2012.  Strong correlation induced charge localization in antiferromagnets. arXiv preprint. arXiv:1212.6634
Kim Y, Hankiewicz EM, Gilbert MJ.  2012.  Topological Excitonic Superfluids in Three Dimensions. Physical review B. 86:184504.
Miao M-S, Kurzman JA, Mammen N, Narasimhan S, Seshadri R.  2012.  Trends in the Electronic Structure of Extended Gold Compounds: Implications for Use of Gold in Heterogeneous Catalysis. Inorg. Chem.. 51:7569.
Van de Walle CG, Janotti A.  2011.  Advances in electronic structure methods for defects and impurities in solids. Phys. Status Solidi B. 248:19.
Yan Q, Rinke P, Winkelnkemper M, Qteish A, Bimberg D, Scheffler M, Van de Walle CG.  2011.  Band parameters and strain effects in ZnO and group-III nitrides. Semicond. Sci. Technol.. 26:14037.
Brown FLH.  2011.  Continuum simulations of biomembrane dynamics and the importance of hydrodynamic effects. Quarterly Reviews of Biophysics. 1-Jul-11:-.
Weber J.R, Koehl W.F, Varley J.B, Janotti A., Bucley B.B, Van de Walle C.G., Awschalom D.D.  2011.  Defects in SiC for quantum computing. J. Appl. Phys.. 109:102417.
Camley BA, Brown FLH.  2011.  Dynamic scaling in phase separation kinetics for quasi-two-dimensional membranes. J. Chem. Phys. 135(22):225106.
Tong H, Umezawa N, Ye J, Ohno T.  2011.  Electronic coupling assembly of semiconductor nanocrystals: self-narrowed band gap to promise solar energy utilization. Energy Environ. Sci. 4:1684.
Chrétien S, Metiu H.  2011.  The electronic structure of the partially reduced rutile TiO2(110) surface: where are the unpaired electrons located? J. Phys. Chem.. 115:4696.
Kurzman JA, Miao M-S, Seshadri R.  2011.  Hybrid functional electronic structure of PbPdO2, a small-gap semiconductor. J. Phys.: Condens. Matte. 23:465501.
Varley J.B., Peelaers H., Janotti A., Van de Walle C.G..  2011.  Hydrogenated cation vacancies in semiconducting oxides. J. Phys.: Condens. Matter. 23:334212.
Vermaak N, Valdevit L, Evans AG, Zok FW, McMeeking RM.  2011.  Implications of Shakedown for Design of Actively Cooled Thermostructural Panels. Journal of Mechanics of Materials and Structures. 6:1313.
Kioupakis E, Rinke P, Delaney KT, Van de Walle CG.  2011.  Indirect Auger recombination as a cause of efficiency droop in nitride LEDs. Appl. Phys. Lett.. 98:161107.
Janotti A, Van de Walle CG.  2011.  LDA and hybrid functional calculations for defects in ZnO, SnO2, and TiO2. Physica Status Solidi (b). 248:799.
Varley J.B, Janotti A., Van de Walle C.G.  2011.  Mechanism of Visible-Light Photocatalysis in Nitrogen-Doped TiO2. Advanced Materials. 23:2343-2347.