Found 6 results[ Author] Title Type Year
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Stability of Si impurity in high-? oxides Microelectronic Engineering. 86:1780.. 2009.
Effects of barium incorporation into HfO2 gate dielectrics on reduction in charged defects: First-principles study. Appl. Phys. Lett.. 94:22903.. 2009.
Origin of high solubility of silicon in La2O3: A first-principles study. Appl. Phys. Lett.. 97:202906.. 2010.
Reduction in charged defects associated with oxygen vacancies in hafnia by magnesium incorporation: First-principles study. Appl. Phys. Lett.. 93:223104.. 2008.
Effects of capping HfO2 with multivalent oxides toward reducing the number of charged defects. Appl. Phys. Lett.. 96:162906.. 2010.
Optimizing optical absorption of TiO2 by alloying with TiS2. Appl. Phys. Lett.. 92:41104.. 2008.