Found 2 resultsAuthor [ Title] Type Year
Filters: Author is K. Shiraishi [Clear All Filters]
Stability of Si impurity in high-? oxides Microelectronic Engineering. 86:1780.. 2009.
Reduction in charged defects associated with oxygen vacancies in hafnia by magnesium incorporation: First-principles study. Appl. Phys. Lett.. 93:223104.. 2008.