Found 10 resultsAuthor [ Title] Type Year
Filters: Author is Janotti, A [Clear All Filters]
Oxide interfaces for novel electronic applications. New Journal of Physics. 16:025005.. 2014.
Hydrogenated vacancies and hidden hydrogen in SrTiO 3. Physical Review B. 89:075202.. 2014.
Hybrid functional calculations of point defects and hydrogen in SrZrO 3. Physical Review B. 89:184109.. 2014.
Hybrid functional calculations of D X centers in AlN and GaN. Physical Review B. 89:085204.. 2014.
Effects of hole localization on limiting p-type conductivity in oxide and nitride semiconductors. Journal of Applied Physics. 115:012014.. 2014.
Effects of carbon on the electrical and optical properties of InN, GaN, and AlN. Physical Review B. 89:035204.. 2014.
Dual behavior of excess electrons in rutile TiO2. physica status solidi (RRL)-Rapid Research Letters. doi: 10.1002/pssr.201206464. 2013.
Controlling the density of the two-dimensional electron gas at the SrTiO3-LaAlO3 interface. Phys. Rev. B. 86(24):241108.. 2012.
Band alignment at band-insulator/Mott-insulator interfaces. physica status solidi (RRL)-Rapid Research Letters.. 2014.
Ambipolar doping in SnO. Applied Physics Letters. 103:082118.. 2013.