Publications

Found 37 results
Author [ Title(Asc)] Type Year
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Lyons J.L, Janotti A., Van de Walle C.G.  2009.  Why nitrogen cannot lead to p-type conductivity in ZnO. Appl. Phys. Lett.. 95:252105.
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Schleife A., Varley J.B, Fuchs F., Rödl C., Bechstedt F., Rinke P., Janotti A., Van de Walle C.G.  2011.  Tin dioxide from first principles: Quasiparticle electronic states and optical properties. Phys. Rev. B. 83:35116.
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Janotti A., Steiauf D., Van de Walle C.G.  2011.  Strain effects on the electronic structure of SrTiO3: Toward high electron mobilities. Phys. Rev. B. 84:201304.
Janotti A., Van de Walle C.G.  2008.  Sources of unintentional n-type conductivity in InN. Appl. Phys. Lett.. 92:32104.
Singh A.K, Janotti A., Scheffler M., Van de Walle C.G.  2008.  Sources of Electrical Conductivity in SnO2. Phys. Rev. Lett.. 101:55502.
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Lyons J.L, Janotti A., Van de Walle C.G.  2009.  Role of Si and Ge as impurities in ZnO. Phys. Rev. B. 80:205113.
Varley J.B, Janotti A., Franchini C., Van de Walle C.G.  2012.  Role of self-trapping in luminescence and p-type conductivity of wide-band-gap oxides. Phys. Rev. B. 85:81109.
Janotti A., Van de Walle C.G..  2011.  The role of oxygen-related defects and hydrogen impurities in HfO2 and ZrO2. Microelectronic Engineering. 88(7):1452-1456.
Van de Walle C.G., Weber J.R., Janotti A..  2008.  Role of hydrogen at germanium/dielectric interfaces. Thin Solid Films. Volume 517, Issue 1, Fifth International Conference on Silicon Epitaxy and Heterostructures (ICSI-5):144-147.
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Weber J.R., Koehl W.F., Varley J.B., Janotti A., Buckley B.B., Van de Walle C.G., Awschalom D.D..  2010.  Quantum Computing with Defects. Proc. Natl. Acad. Sci.. 107:8513.
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Weber J.R., Janotti A., Van de Walle C.G..  2009.  Point defects in Al2O3 and their impact on gate stacks. Microelectronic Engineering. 86:1756.
Weber J.R., Janotti A., Van de Walle C.G..  2009.  Point defects in Al2O3 and their impact on gate stacks. Microelectronic Engineering. 86:1756.
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Janotti A., Van de Walle C.G.  2005.  Oxygen vacancies in ZnO. Applied Physics Letters. 87:122102.
Varley J.B., Weber J.R., Janotti A., Van de Walle C.G..  2010.  Oxygen vacancies and donor impurities in beta-Ga2O3. Appl. Phys. Lett.. 97:142106.
Umezawa N., Janotti A., Rinke P., Chikyow T., Van de Walle C.G.  2008.  Optimizing optical absorption of TiO2 by alloying with TiS2. Appl. Phys. Lett.. 92:41104.
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Janotti A., Van de Walle C.G.  2006.  New insights into the role of native point defects in ZnO. Journal of Crystal Growth. 287:58-65.
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Janotti A., Reunchan P., Limpijumnong S., Van de Walle C.G.  2008.  Mutual Passivation of Electrically Active and Isovalent Impurities in Dilute Nitrides. Phys. Rev. Lett.. 100:45505.
Hoang K., Janotti A., Van de Walle C.G.  2012.  Mechanisms for the decomposition and dehydrogenation of Li amide/imide. Phys. Rev. B. 85:64115.
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Weber J.R, Janotti A., Van de Walle C.G.  2010.  Intrinsic and extrinsic causes of electron accumulation layers on InAs surfaces. Appl. Phys. Lett.. 97:192106.
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Varley J.B., Peelaers H., Janotti A., Van de Walle C.G..  2011.  Hydrogenated cation vacancies in semiconducting oxides. J. Phys.: Condens. Matter. 23:334212.
Janotti A., Van de Walle C.G.  2007.  Hydrogen multicenter bonds. Nature Materials. 6:44-47.
Varley J.B, Janotti A., Singh A.K, Van de Walle C.G.  2009.  Hydrogen interactions with acceptor impurities in SnO2: First-principles calculations. Phys. Rev. B. 79:245206.
Varley J.B, Janotti A., Singh A.K, Van de Walle C.G.  2009.  Hydrogen interactions with acceptor impurities in SnO2: First-principles calculations. Phys. Rev. B. 79:245206.
Oo W.MHlaing, Tabatabaei S., McCluskey M.D, Varley J.B, Janotti A., Van de Walle C.G.  2010.  Hydrogen donors in SnO2 studied by infrared spectroscopy and first-principles calculations. Phys. Rev. B. 82:193201.
Janotti A., Varley J.B, Rinke P., Umezawa N., Kresse G., Van de Walle C.G.  2010.  Hybrid functional studies of the oxygen vacancy in TiO2. Phys. Rev. B. 81:85212.

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