Found 3 resultsAuthor [ Title] Type Year
Filters: Author is Lyons, JL [Clear All Filters]
Hybrid functional calculations of D X centers in AlN and GaN. Physical Review B. 89:085204.. 2014.
Effects of hole localization on limiting p-type conductivity in oxide and nitride semiconductors. Journal of Applied Physics. 115:012014.. 2014.
Effects of carbon on the electrical and optical properties of InN, GaN, and AlN. Physical Review B. 89:035204.. 2014.