Publications
Found 33 results
Author Title [ Type
Filters: Author is C. G. Van de Walle [Clear All Filters]
Why nitrogen cannot lead to p-type conductivity in ZnO. Appl. Phys. Lett.. 95:252105.
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2009. Tin dioxide from first principles: Quasiparticle electronic states and optical properties. Phys. Rev. B. 83:35116.
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2011. Strain effects on the electronic structure of SrTiO3: Toward high electron mobilities. Phys. Rev. B. 84:201304.
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2011. Sources of unintentional n-type conductivity in InN. Appl. Phys. Lett.. 92:32104.
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2008. Sources of Electrical Conductivity in SnO2. Phys. Rev. Lett.. 101:55502.
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2008. Role of Si and Ge as impurities in ZnO. Phys. Rev. B. 80:205113.
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2009. Role of self-trapping in luminescence and p-type conductivity of wide-band-gap oxides. Phys. Rev. B. 85:81109.
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2012. Oxygen vacancies in ZnO. Applied Physics Letters. 87:122102.
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2005. Origins of Fermi-level pinning on GaN and InN polar and nonpolar surfaces. Europhys. Lett.. 76:305.
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2006. Optimizing optical absorption of TiO2 by alloying with TiS2. Appl. Phys. Lett.. 92:41104.
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2008. New insights into the role of native point defects in ZnO. Journal of Crystal Growth. 287:58-65.
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2006. Mutual Passivation of Electrically Active and Isovalent Impurities in Dilute Nitrides. Phys. Rev. Lett.. 100:45505.
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2008. Microscopic origins of surface states on nitride surfaces. J. Appl. Phys.. 101:81704.
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2007. Mechanisms for the decomposition and dehydrogenation of Li amide/imide. Phys. Rev. B. 85:64115.
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2012. Mechanism for the decomposition of lithium borohydride. International Journal of Hydrogen Energy. 37:5825.
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2012. Intrinsic and extrinsic causes of electron accumulation layers on InAs surfaces. Appl. Phys. Lett.. 97:192106.
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2010. Hydrogen multicenter bonds. Nature Materials. 6:44-47.
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2007. Hydrogen interactions with acceptor impurities in SnO2: First-principles calculations. Phys. Rev. B. 79:245206.
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2009. Hydrogen interactions with acceptor impurities in SnO2: First-principles calculations. Phys. Rev. B. 79:245206.
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2009. Hydrogen donors in SnO2 studied by infrared spectroscopy and first-principles calculations. Phys. Rev. B. 82:193201.
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2010. Hybrid functional studies of the oxygen vacancy in TiO2. Phys. Rev. B. 81:85212.
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2010. Group-V impurities in SnO2 from first-principles calculations. Phys. Rev. B. 81:245216.
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2010. Electronic structure of nitride surfaces. Journal of Crystal Growth, First International Symposium on Growth of Nitrides - ISGN-1. 300:199-203.
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2006. Electrical activity of hydrogen impurities in GaSb: First-principles calculations. Phys. Rev. B. 78:35204.
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2008. Effects of strain on the electron effective mass in GaN and AlN. Appl. Phys. Lett.. 102:142105.
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2013.