Publications
Carbon impurities and the yellow luminescence in GaN. Appl. Phys. Lett.. 97:152108.
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2010. Carbon-nitrogen molecules in GaAs and GaP. Phys. Rev. B. 77:195209.
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2008. Controlling the conductivity of InN. physica status solidi (a). 207:1024.
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2010. Dangling-bond defects and hydrogen passivation in germanium. Appl. Phys. Lett.. 91:142101.
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2007. Decomposition mechanism and the effects of metal additives on the kinetics of lithium alanate. Phys. Chem. Chem. Phys.. 14:2840.
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2012. Defects at Ge/oxide and IIIäóñV/oxide interfaces. Microelectronic Engineering. 109:211.
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2013. Defects in SiC for quantum computing. J. Appl. Phys.. 109:102417.
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2011. Effects of cation d states on III-nitride and II-oxide wide-band-gap semiconductors. Physical Review B. 74:45202.
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2006. Effects of doping on the lattice parameter of SrTiO3. Appl. Phys. Lett.. 100:262104.
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2012. Effects of strain on the electron effective mass in GaN and AlN. Appl. Phys. Lett.. 102:142105.
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2013. Electrical activity of hydrogen impurities in GaSb: First-principles calculations. Phys. Rev. B. 78:35204.
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2008. Group-V impurities in SnO2 from first-principles calculations. Phys. Rev. B. 81:245216.
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2010. Hybrid functional studies of the oxygen vacancy in TiO2. Phys. Rev. B. 81:85212.
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2010. Hydrogen donors in SnO2 studied by infrared spectroscopy and first-principles calculations. Phys. Rev. B. 82:193201.
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2010. Hydrogen interactions with acceptor impurities in SnO2: First-principles calculations. Phys. Rev. B. 79:245206.
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2009. Hydrogen interactions with acceptor impurities in SnO2: First-principles calculations. Phys. Rev. B. 79:245206.
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2009. Hydrogen multicenter bonds. Nature Materials. 6:44-47.
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2007. Hydrogenated cation vacancies in semiconducting oxides. J. Phys.: Condens. Matter. 23:334212.
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2011. Intrinsic and extrinsic causes of electron accumulation layers on InAs surfaces. Appl. Phys. Lett.. 97:192106.
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2010. Mechanisms for the decomposition and dehydrogenation of Li amide/imide. Phys. Rev. B. 85:64115.
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2012. Mutual Passivation of Electrically Active and Isovalent Impurities in Dilute Nitrides. Phys. Rev. Lett.. 100:45505.
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2008. New insights into the role of native point defects in ZnO. Journal of Crystal Growth. 287:58-65.
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2006. Optimizing optical absorption of TiO2 by alloying with TiS2. Appl. Phys. Lett.. 92:41104.
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2008. Oxygen vacancies and donor impurities in beta-Ga2O3. Appl. Phys. Lett.. 97:142106.
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2010. Oxygen vacancies in ZnO. Applied Physics Letters. 87:122102.
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2005.