Publications

Found 24 results
Author Title [ Type(Desc)] Year
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Book Chapter
Kioupakis E., Rinke P., Janotti A., Yan Q., Van de Walle C.G..  2013.  Energy Conversion: Solid-State Lighting. Energy Conversion: Solid-State Lighting, in Computational Approaches to Energy Materials (eds A. Walsh, A. A. Sokol and C. R. A. Catlow).
Conference Paper
Tang X, Alabduljalil M, Jin X, Yang T.  2014.  Load balancing for partition-based similarity search. Proceedings of the 37th international ACM SIGIR conference on Research & development in information retrieval.
Journal Article
Yan Q, Rinke P, Winkelnkemper M, Qteish A, Bimberg D, Scheffler M, Van de Walle CG.  2011.  Band parameters and strain effects in ZnO and group-III nitrides. Semicond. Sci. Technol.. 26:14037.
Alabduljalil M., Tang X., Yang T..  2013.  Cache-Conscious Performance Optimization for Similarity Search. SIGIR’2013 (Proc. of 36th ACM SIGIR conference on Research and Development in Information Retrieval). (in press)
Roberts C, Yan Q, Miao M-S, Van de Walle CG.  2012.  Confinement effects on valence-subband character and polarization anisotropy in (1122) semipolar InGaN/GaN quantum wells. Journal of Applied Physics. 111:73113.
McBride PM, Yan Q, Van de Walle CG.  2014.  Effects of In profile on simulations of InGaN/GaN multi-quantum-well light-emitting diodes. Applied Physics Letters. 105:083507.
Tong H, Umezawa N, Ye J, Ohno T.  2011.  Electronic coupling assembly of semiconductor nanocrystals: self-narrowed band gap to promise solar energy utilization. Energy Environ. Sci. 4:1684.
Miao M.S, Yan Q.M, Van de Walle C.G..  2013.  Electronic structure of a single-layer InN quantum well in a GaN matrix. Appl. Phys. Lett.. 102:102103.
Yan Q, Kioupakis E, Jena D, Van de Walle CG.  2014.  First-principles study of high-field-related electronic behavior of group-III nitrides. Physical Review B. 90:121201.
Wang Y, Yepremyan A, Ghorai S, Todd R, Aue DH, Zhang L.  2013.  Gold-Catalyzed Cyclizations of cis-Enediynes: Insights into the Nature of Gold–Aryne Interactions. Angewandte Chemie. 125:7949–7953.
Kioupakis E, Yan Q, Van de Walle CG.  2012.  Interplay of polarization fields and Auger recombination in the efficiency droop of nitride light-emitting diodes. Applied Physics Letters. 101(23):231107-231107.
Li Y, Kamousi P, Han F, Yang S, Yan X, Suri S.  2013.  Memory Efficient Minimum Substring Partitioning. Proc. of the 39th International Conference on Very Large Databases. Aug
Li Y, Kamousi P, Han F, Yang S, Yan X, Suri S.  2013.  Memory Efficient Minimum Substring Partitioning. Proc. of the 39th International Conference on Very Large Databases. Aug
Pho TV, Yuen JD, Kurzman JA, Smith BG, Miao M, Walker WT, Seshadri R, Wudl F.  2012.  N-Alkyldinaphthocarbazoles, Azaheptacenes, for Solution-Processed Organic Field-Effect Transistors. Journal of the American Chemical Society. 134(44):18185–18188.
Pho TV, Yuen JD, Kurzman JA, Smith BG, Miao M, Walker WT, Seshadri R, Wudl F.  2012.  N-Alkyldinaphthocarbazoles, Azaheptacenes, for Solution-Processed Organic Field-Effect Transistors. J. Am. Chem. Soc. 134:18185.
Alabduljalil M, Tang X, Yang T.  2013.  Optimizing Parallel Algorithms for All Pairs Similarity Search. Proceedings of the sixth ACM International Conference on Web Search and data mining. WSDM13:203.
Yan Q, Janotti A, Scheffler M, Van de Walle CG.  2014.  Origins of optical absorption and emission lines in AlN. Applied Physics Letters. 105:111104.
Yu J, Scheffler M, Metiu H.  2013.  Oxidative Dehydrogenation of Methane by Isolated Vanadium Oxide Clusters Supported on Au (111) and Ag (111) Surfaces. The Journal of Physical Chemistry C. 117:18475–18483.
Yan Q, Janotti A, Scheffler M, de Walle V, G C.  2012.  Role of nitrogen vacancies in the luminescence of Mg-doped GaN. Applied Physics Letters. 100:142110.
Yan Q, Rinke P, Scheffler M, Van de Walle CG.  2010.  Role of strain in polarization switching in semipolar InGaN/GaN quantum wells. Appl. Phys. Lett.. 97:181102.
Yan Q, Rinke P, Winkelnkemper M, Qteish A, Bimberg D, Scheffler M, Van de Walle CG.  2012.  Strain effects and band parameters in MgO, ZnO, and CdO. Appl. Phys. Lett.. 101:152105.
Yan Q, Rinke P, Scheffler M, Van de Walle CG.  2009.  Strain effects in group-III nitrides: Deformation potentials for AlN, GaN, and InN. Appl. Phys. Lett.. 95:121111.
Yan Q, Rinke P, Scheffler M, Van de Walle CG.  2009.  Strain effects in group-III nitrides: Deformation potentials for AlN, GaN, and InN. Appl. Phys. Lett.. 95:121111.
Kioupakis E, Yan Q, Steiauf D, Van de Walle CG.  2013.  Temperature and carrier-density dependence of Auger and radiative recombination in nitride optoelectronic devices. New Journal of Physics. 15:125006.