Publications

Found 37 results
Author Title Type [ Year(Desc)]
Filters: Author is A. Janotti  [Clear All Filters]
2005
Janotti A., Van de Walle C.G.  2005.  Oxygen vacancies in ZnO. Applied Physics Letters. 87:122102.
2006
Janotti A., Segev D., Van de Walle C.G.  2006.  Effects of cation d states on III-nitride and II-oxide wide-band-gap semiconductors. Physical Review B. 74:45202.
Janotti A., Van de Walle C.G.  2006.  New insights into the role of native point defects in ZnO. Journal of Crystal Growth. 287:58-65.
2007
Weber J.R, Janotti A., Rinke P., Van de Walle C.G.  2007.  Dangling-bond defects and hydrogen passivation in germanium. Appl. Phys. Lett.. 91:142101.
Janotti A., Van de Walle C.G.  2007.  Hydrogen multicenter bonds. Nature Materials. 6:44-47.
2008
Limpijumnong S., Reunchan P., Janotti A., Van de Walle C.G.  2008.  Carbon-nitrogen molecules in GaAs and GaP. Phys. Rev. B. 77:195209.
Peles A., Janotti A., Van de Walle C.G.  2008.  Electrical activity of hydrogen impurities in GaSb: First-principles calculations. Phys. Rev. B. 78:35204.
Janotti A., Reunchan P., Limpijumnong S., Van de Walle C.G.  2008.  Mutual Passivation of Electrically Active and Isovalent Impurities in Dilute Nitrides. Phys. Rev. Lett.. 100:45505.
Umezawa N., Janotti A., Rinke P., Chikyow T., Van de Walle C.G.  2008.  Optimizing optical absorption of TiO2 by alloying with TiS2. Appl. Phys. Lett.. 92:41104.
Van de Walle C.G., Weber J.R., Janotti A..  2008.  Role of hydrogen at germanium/dielectric interfaces. Thin Solid Films. Volume 517, Issue 1, Fifth International Conference on Silicon Epitaxy and Heterostructures (ICSI-5):144-147.
Singh A.K, Janotti A., Scheffler M., Van de Walle C.G.  2008.  Sources of Electrical Conductivity in SnO2. Phys. Rev. Lett.. 101:55502.
Janotti A., Van de Walle C.G.  2008.  Sources of unintentional n-type conductivity in InN. Appl. Phys. Lett.. 92:32104.
2009
Varley J.B, Janotti A., Singh A.K, Van de Walle C.G.  2009.  Hydrogen interactions with acceptor impurities in SnO2: First-principles calculations. Phys. Rev. B. 79:245206.
Varley J.B, Janotti A., Singh A.K, Van de Walle C.G.  2009.  Hydrogen interactions with acceptor impurities in SnO2: First-principles calculations. Phys. Rev. B. 79:245206.
Weber J.R., Janotti A., Van de Walle C.G..  2009.  Point defects in Al2O3 and their impact on gate stacks. Microelectronic Engineering. 86:1756.
Weber J.R., Janotti A., Van de Walle C.G..  2009.  Point defects in Al2O3 and their impact on gate stacks. Microelectronic Engineering. 86:1756.
Lyons J.L, Janotti A., Van de Walle C.G.  2009.  Role of Si and Ge as impurities in ZnO. Phys. Rev. B. 80:205113.
Lyons J.L, Janotti A., Van de Walle C.G.  2009.  Why nitrogen cannot lead to p-type conductivity in ZnO. Appl. Phys. Lett.. 95:252105.
2010
Lyons J.L, Janotti A., Van de Walle C.G.  2010.  Carbon impurities and the yellow luminescence in GaN. Appl. Phys. Lett.. 97:152108.
Van de Walle C.G, Lyons J.L, Janotti A..  2010.  Controlling the conductivity of InN. physica status solidi (a). 207:1024.
Varley J.B, Janotti A., Van de Walle C.G.  2010.  Group-V impurities in SnO2 from first-principles calculations. Phys. Rev. B. 81:245216.
Janotti A., Varley J.B, Rinke P., Umezawa N., Kresse G., Van de Walle C.G.  2010.  Hybrid functional studies of the oxygen vacancy in TiO2. Phys. Rev. B. 81:85212.
Oo W.MHlaing, Tabatabaei S., McCluskey M.D, Varley J.B, Janotti A., Van de Walle C.G.  2010.  Hydrogen donors in SnO2 studied by infrared spectroscopy and first-principles calculations. Phys. Rev. B. 82:193201.
Weber J.R, Janotti A., Van de Walle C.G.  2010.  Intrinsic and extrinsic causes of electron accumulation layers on InAs surfaces. Appl. Phys. Lett.. 97:192106.
Varley J.B., Weber J.R., Janotti A., Van de Walle C.G..  2010.  Oxygen vacancies and donor impurities in beta-Ga2O3. Appl. Phys. Lett.. 97:142106.

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