Publications
Oxygen vacancies in ZnO. Applied Physics Letters. 87:122102.
.
2005. Effects of cation d states on III-nitride and II-oxide wide-band-gap semiconductors. Physical Review B. 74:45202.
.
2006. New insights into the role of native point defects in ZnO. Journal of Crystal Growth. 287:58-65.
.
2006. Dangling-bond defects and hydrogen passivation in germanium. Appl. Phys. Lett.. 91:142101.
.
2007. Hydrogen multicenter bonds. Nature Materials. 6:44-47.
.
2007. Carbon-nitrogen molecules in GaAs and GaP. Phys. Rev. B. 77:195209.
.
2008. Electrical activity of hydrogen impurities in GaSb: First-principles calculations. Phys. Rev. B. 78:35204.
.
2008. Mutual Passivation of Electrically Active and Isovalent Impurities in Dilute Nitrides. Phys. Rev. Lett.. 100:45505.
.
2008. Optimizing optical absorption of TiO2 by alloying with TiS2. Appl. Phys. Lett.. 92:41104.
.
2008. Role of hydrogen at germanium/dielectric interfaces. Thin Solid Films. Volume 517, Issue 1, Fifth International Conference on Silicon Epitaxy and Heterostructures (ICSI-5):144-147.
.
2008. Sources of Electrical Conductivity in SnO2. Phys. Rev. Lett.. 101:55502.
.
2008. Sources of unintentional n-type conductivity in InN. Appl. Phys. Lett.. 92:32104.
.
2008. Hydrogen interactions with acceptor impurities in SnO2: First-principles calculations. Phys. Rev. B. 79:245206.
.
2009. Hydrogen interactions with acceptor impurities in SnO2: First-principles calculations. Phys. Rev. B. 79:245206.
.
2009. Point defects in Al2O3 and their impact on gate stacks. Microelectronic Engineering. 86:1756.
.
2009. Point defects in Al2O3 and their impact on gate stacks. Microelectronic Engineering. 86:1756.
.
2009. Role of Si and Ge as impurities in ZnO. Phys. Rev. B. 80:205113.
.
2009. Why nitrogen cannot lead to p-type conductivity in ZnO. Appl. Phys. Lett.. 95:252105.
.
2009. Carbon impurities and the yellow luminescence in GaN. Appl. Phys. Lett.. 97:152108.
.
2010. Controlling the conductivity of InN. physica status solidi (a). 207:1024.
.
2010. Group-V impurities in SnO2 from first-principles calculations. Phys. Rev. B. 81:245216.
.
2010. Hybrid functional studies of the oxygen vacancy in TiO2. Phys. Rev. B. 81:85212.
.
2010. Hydrogen donors in SnO2 studied by infrared spectroscopy and first-principles calculations. Phys. Rev. B. 82:193201.
.
2010. Intrinsic and extrinsic causes of electron accumulation layers on InAs surfaces. Appl. Phys. Lett.. 97:192106.
.
2010. Oxygen vacancies and donor impurities in beta-Ga2O3. Appl. Phys. Lett.. 97:142106.
.
2010.