Publications
Found 13 results
Author Title Type [ Year
Filters: Author is Van de Walle, Chris G [Clear All Filters]
Auger Recombination in GaAs from First Principles. ACS Photonics. 1:643–646.
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2014. Band alignments and polarization properties of BN polymorphs. Applied Physics Express. 7:031001.
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2014. Effects of In profile on simulations of InGaN/GaN multi-quantum-well light-emitting diodes. Applied Physics Letters. 105:083507.
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2014. First-principles study of high-field-related electronic behavior of group-III nitrides. Physical Review B. 90:121201.
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2014. Origins of optical absorption and emission lines in AlN. Applied Physics Letters. 105:111104.
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2014. Vacancies and small polarons in SrTiO 3. Physical Review B. 90:085202.
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2014. Conductivity and transparency of TiO2 from first principles. SPIE Solar Energy+ Technology.
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2013. Impact of native defects in high-k dielectric oxides on GaN/oxide metal–oxide–semiconductor devices. physica status solidi (b). 250:787–791.
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2013. LiH as a Li+ and H- ion provider. Solid State Ionics. 253:53–56.
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2013. Native point defects and dangling bonds in alpha-Al2O3. Journal of Applied Physics. 113(4):44501.
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2013. Structural origins of the properties of rare earth nickelate superlattices. Phys. Rev. B. 87(6):60101.
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2013. Temperature and carrier-density dependence of Auger and radiative recombination in nitride optoelectronic devices. New Journal of Physics. 15:125006.
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2013. Interplay of polarization fields and Auger recombination in the efficiency droop of nitride light-emitting diodes. Applied Physics Letters. 101(23):231107-231107.
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2012.