Publications

Found 10 results
Author Title [ Type(Desc)] Year
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Journal Article
Momida H, Cockayne E, Umezawa N, Ohno T.  2010.  Computational study of the dielectric properties of [La,Sc]2O3 solid solutions. Journal of Applied Physics. 107:74104.
Umezawa N..  2009.  Effects of barium incorporation into HfO2 gate dielectrics on reduction in charged defects: First-principles study. Appl. Phys. Lett.. 94:22903.
Umezawa N.  2010.  Effects of capping HfO2 with multivalent oxides toward reducing the number of charged defects. Appl. Phys. Lett.. 96:162906.
Tong H, Umezawa N, Ye J, Ohno T.  2011.  Electronic coupling assembly of semiconductor nanocrystals: self-narrowed band gap to promise solar energy utilization. Energy Environ. Sci. 4:1684.
Janotti A., Varley J.B, Rinke P., Umezawa N., Kresse G., Van de Walle C.G.  2010.  Hybrid functional studies of the oxygen vacancy in TiO2. Phys. Rev. B. 81:85212.
Singh N, Upham DC, Liu R-F, Burk JJames, Economou NJohn, Buratto SK, Metiu H, McFarland EW.  2014.  Investigation of the active sites of rhodium sulfide for hydrogen evolution/oxidation using carbon monoxide as a probe. Langmuir.
Umezawa N., Janotti A., Rinke P., Chikyow T., Van de Walle C.G.  2008.  Optimizing optical absorption of TiO2 by alloying with TiS2. Appl. Phys. Lett.. 92:41104.
Umezawa N, Shiraishi K.  2010.  Origin of high solubility of silicon in La2O3: A first-principles study. Appl. Phys. Lett.. 97:202906.
Umezawa N., Sato M., Shiraishi K..  2008.  Reduction in charged defects associated with oxygen vacancies in hafnia by magnesium incorporation: First-principles study. Appl. Phys. Lett.. 93:223104.
Umezawa N., Shiraishi K., Chikyow T..  2009.  Stability of Si impurity in high-? oxides Microelectronic Engineering. 86:1780.