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Absolute surface energies of polar and nonpolar planes of GaN. Phys. Rev. B. 89:081305.. 2014.
Band alignment at band-insulator/Mott-insulator interfaces. physica status solidi (RRL)-Rapid Research Letters.. 2014.
Band alignments and polarization properties of BN polymorphs. Applied Physics Express. 7:031001.. 2014.
Effects of carbon on the electrical and optical properties of InN, GaN, and AlN. Physical Review B. 89:035204.. 2014.
Effects of hole localization on limiting p-type conductivity in oxide and nitride semiconductors. Journal of Applied Physics. 115:012014.. 2014.
A Facile Synthesis of Dynamic, Shape-Changing Polymer Particles. Angewandte Chemie. 126:7138–7142.. 2014.
A Facile Synthesis of Dynamic, Shape-Changing Polymer Particles. Angewandte Chemie.. 2014.
First-principles study of high-field-related electronic behavior of group-III nitrides. Physical Review B. 90:121201.. 2014.
Generalized Kitaev Models and Slave Genons. arXiv preprint arXiv:1405.1780.. 2014.
Hybrid functional calculations of D X centers in AlN and GaN. Physical Review B. 89:085204.. 2014.
Hybrid functional calculations of point defects and hydrogen in SrZrO 3. Physical Review B. 89:184109.. 2014.
Hydrogenated vacancies and hidden hydrogen in SrTiO 3. Physical Review B. 89:075202.. 2014.
Load balancing for partition-based similarity search. Proceedings of the 37th international ACM SIGIR conference on Research & development in information retrieval.. 2014.
Origins of optical absorption and emission lines in AlN. Applied Physics Letters. 105:111104.. 2014.
Oxide interfaces for novel electronic applications. New Journal of Physics. 16:025005.. 2014.
Vacancies and small polarons in SrTiO 3. Physical Review B. 90:085202.. 2014.
Accuracy of topological entanglement entropy on finite cylinders. Physical Review Letters. 111:107205.. 2013.
Ambipolar doping in SnO. Applied Physics Letters. 103:082118.. 2013.
Collapsing Schr$\backslash$" odinger Cats in the Density Matrix Renormalization Group. arXiv preprint arXiv:1309.7438.. 2013.
Conductivity and transparency of TiO2 from first principles. SPIE Solar Energy+ Technology.. 2013.
Dangling bonds and vacancies in germanium. Phys. Rev. B. 87(3):35203.. 2013.
Defects at Ge/oxide and IIIäóñV/oxide interfaces. Microelectronic Engineering. 109:211.. 2013.
Dual behavior of excess electrons in rutile TiO2. physica status solidi (RRL)-Rapid Research Letters. doi: 10.1002/pssr.201206464. 2013.
Effects of strain on the electron effective mass in GaN and AlN. Appl. Phys. Lett.. 102:142105.. 2013.