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Effects of carbon on the electrical and optical properties of InN, GaN, and AlN. Physical Review B. 89:035204.. 2014.
The effect of surface tethering on the folding of the src-SH3 protein domain. Phys. Biol.. 6:15004.. 2009.
Dual behavior of excess electrons in rutile TiO2. physica status solidi (RRL)-Rapid Research Letters. doi: 10.1002/pssr.201206464. 2013.
Defects in SiC for quantum computing. J. Appl. Phys.. 109:102417.. 2011.
Defects at Ge/oxide and IIIäóñV/oxide interfaces. Microelectronic Engineering. 109:211.. 2013.
Decomposition mechanism and the effects of metal additives on the kinetics of lithium alanate. Phys. Chem. Chem. Phys.. 14:2840.. 2012.
Dangling-bond defects and hydrogen passivation in germanium. Appl. Phys. Lett.. 91:142101.. 2007.
Dangling bonds and vacancies in germanium. Phys. Rev. B. 87(3):35203.. 2013.
Controlling the density of the two-dimensional electron gas at the SrTiO3-LaAlO3 interface. Phys. Rev. B. 86(24):241108.. 2012.
Controlling the conductivity of InN. physica status solidi (a). 207:1024.. 2010.
Conductivity and transparency of TiO2 from first principles. SPIE Solar Energy+ Technology.. 2013.
Collapsing Schr$\backslash$" odinger Cats in the Density Matrix Renormalization Group. arXiv preprint arXiv:1309.7438.. 2013.
Carbon-nitrogen molecules in GaAs and GaP. Phys. Rev. B. 77:195209.. 2008.
Carbon impurities and the yellow luminescence in GaN. Appl. Phys. Lett.. 97:152108.. 2010.
Band alignments and polarization properties of BN polymorphs. Applied Physics Express. 7:031001.. 2014.
Band alignment at band-insulator/Mott-insulator interfaces. physica status solidi (RRL)-Rapid Research Letters.. 2014.
Atomic and electronic structure of hydrogen-related centers in hydrogen storage materials. Physica B: Condensed Matter. 404(5-7):793.. 2009.
Atomic and electronic structure of hydrogen-related centers in hydrogen storage materials. Physica B. Physics of Condensed Matter. 2008.
Ambipolar doping in SnO. Applied Physics Letters. 103:082118.. 2013.
Alternative sources of p-type conduction in acceptor-doped ZnO. Appl. Phys. Lett.. 97:72112.. 2010.
Advances in electronic structure methods for defects and impurities in solids. Phys. Status Solidi B. 248:19.. 2011.
Accuracy of topological entanglement entropy on finite cylinders. Physical Review Letters. 111:107205.. 2013.
Absolute surface energies of polar and nonpolar planes of GaN. Phys. Rev. B. 89:081305.. 2014.