Found 10 resultsAuthor [ Title] Type Year
Filters: First Letter Of Last Name is U [Clear All Filters]
Computational study of the dielectric properties of [La,Sc]2O3 solid solutions. Journal of Applied Physics. 107:74104.. 2010.
Effects of barium incorporation into HfO2 gate dielectrics on reduction in charged defects: First-principles study. Appl. Phys. Lett.. 94:22903.. 2009.
Effects of capping HfO2 with multivalent oxides toward reducing the number of charged defects. Appl. Phys. Lett.. 96:162906.. 2010.
Electronic coupling assembly of semiconductor nanocrystals: self-narrowed band gap to promise solar energy utilization. Energy Environ. Sci. 4:1684.. 2011.
Hybrid functional studies of the oxygen vacancy in TiO2. Phys. Rev. B. 81:85212.. 2010.
Optimizing optical absorption of TiO2 by alloying with TiS2. Appl. Phys. Lett.. 92:41104.. 2008.
Origin of high solubility of silicon in La2O3: A first-principles study. Appl. Phys. Lett.. 97:202906.. 2010.
Reduction in charged defects associated with oxygen vacancies in hafnia by magnesium incorporation: First-principles study. Appl. Phys. Lett.. 93:223104.. 2008.
Stability of Si impurity in high-? oxides Microelectronic Engineering. 86:1780.. 2009.